10N70-Q Datasheet (Unisonic Technologies)

10N70-Q, N-CHANNEL POWER MOSFET

The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in

10N70-Q Features

* RDS(ON) =1.2Ω@VGS =10V

* Low gate charge ( typical 44 nC)

* Low Crss ( typical 18 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* SYMBOL Power MOSFET TO-220F TO-220F1

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N