DBES105A Datasheet - United Monolithic Semiconductors

DBES105A Flip-Chip Dual Diode

DBES105A Features

* High cut-off frequencies : 3THz

* High breakdown voltage : < -5V @ 20µA

* Good ideality factor : 1.2

* Low parasitic inductances

* Low cost technology

* Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ide

Datasheet Details

DBES105A

United Monolithic Semiconductors

58.66 KB

Flip-chip dual diode.

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