EC2612-99F - 40GHz Super Low Noise pHEMT

United Monolithic Semiconductors

Datasheet Details

The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology..

low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. D: Drain G: Gate S: Source Main Features.
0.8dB minimum noise figure @ 18GHz.
1.5dB minimum noise figure @ 40GHz.
12dB associated gain @ 18GHz.
9.5dB associated gain @ 40GHz.
Chip size: 0.63 x 0.37 x 0.1 mm Mai.

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