Datasheet Specifications
- Part number
- UJ4C075018K4S
- Manufacturer
- UnitedSiC
- File Size
- 771.40 KB
- Datasheet
- UJ4C075018K4S-UnitedSiC.pdf
- Description
- SiC Cascode JFET
Description
DATASHEET UJ4C075018K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 18 mohm Rev.B, January 202.
Features
* w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 102nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-Applications
* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075018K4S Rev. B, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 SingUJ4C075018K4S Distributors
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