UJ4C075018K3S Datasheet | UnitedSiC

CASE CASE D (2) Silicon Carbide (Si C) Cascode JFET Elite Si C, Power N-Channel, TO-247-3L, 750 V, 18 mohm Rev. B, January 2025 Description The UJ4C075018K3S is a 750V, 18m W G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. 1 23 Part Number UJ4C075018K3S G (1) Package TO-247-3L Features S (3) w On-resistance RDS(on): 18m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 102n C w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8n C w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 Marking UJ4C075018K3S Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075018K3S Rev. B, January 2025 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Symbol VDS VGS IDM EAS Ptot TJ,max TJ, TSTG Test Conditions DC TC = 25°C TC = 100°C TC = 25°C L=15m H, IAS =3.6A TC = 25°C Value 750 -20 to +20 81 60 205 97.2 385 175 -55 to 175 Units V V A A A m J W °C °C °C Thermal Characteristics Parameter Thermal resistance,...