UJ4C075023B7S Datasheet | UnitedSiC

Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Part Number UJ4C075023B7S Package D2PAK-7L Marking UJ4C075023B7S Silicon Carbide (Si C) Cascode JFET Elite Si C, Power N-Channel, D2PAK-7L, 750 V, 23 mohm Rev. C, January 2025 Description The UJ4C075023B7S is a 750V, 23m W G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. Features w On-resistance RDS(on): 23m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 80n C w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8n C w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w D2PAK-7L package for faster switching, clean gate waveforms Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075023B7S Rev. C, January 2025 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Si C FET dv/dt ruggedness Power dissipation Maximum junction temperature Operating and storage temperature Reflow soldering temperature 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Symbol VDS IDM EAS dv/dt Ptot TJ,max TJ, TSTG Tsolder Test Conditions DC AC (f > 1Hz) TC = 25°C TC = 100°C TC = 25°C L=15m H, IAS =3A VDS [ 500V TC = 25°C reflow MSL 1 Value 750 -20 to +20 -25 to +25 64...