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UJ4C075023B7S Datasheet 750v Sic Cascode JFET

Manufacturer: UnitedSiC

Overview: DATASHEET UJ4C075023B7S Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Part Number UJ4C075023B7S Package D2PAK-7L Marking UJ4C075023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 750 V, 23 mohm Rev.

Datasheet Details

Part number UJ4C075023B7S
Manufacturer UnitedSiC
File Size 0.98 MB
Description 750V SiC Cascode JFET
Datasheet UJ4C075023B7S-UnitedSiC.pdf

General Description

The UJ4C075023B7S is a 750V, 23mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Key Features

  • w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 80nC w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w D2PAK-7L package for faster switching, clean gate waveforms Typical.

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