UJ4C075023K4S Datasheet | UnitedSiC

CASE CASE D (1) Silicon Carbide (Si C) Cascode JFET Elite Si C, Power N-Channel, TO-247-4L, 750 V, 23 mohm Rev. C, January 2025 Description The UJ4C075023K4S is a 750V, 23m W G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. 1 2 34 Part Number UJ4C075023K4S G (4) KS (3) Package TO-247-4L S (2) Marking UJ4C075023K4S Features w On-resistance RDS(on): 23m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 105n C w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8n C w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w TO-247-4L package for faster switching, clean gate waveforms Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075023K4S Rev. C, January 2025 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Si C FET dv/dt ruggedness Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Symbol VDS IDM EAS dv/dt Ptot TJ,max TJ, TSTG Test Conditions DC AC (f > 1Hz) TC = 25°C TC = 100°C TC = 25°C L=15m H, IAS =3A VDS [ 500V TC = 25°C Value...