UJ4C075023K4S Datasheet | onsemi

Silicon Carbide (Si C) Cascode JFET - Elite Si C, Power N-Channel, TO247-4, 750 V, 23 mohm Description The UJ4C075023K4S is a 750 V, 23 m W G4 Si C FET. It is based on a unique ’cascode’ circuit configuration, in which a normally-on Si C JFET is is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. Features - On-resistance RDS(on): 23 m W (typ) - Operating Temperature: 175 °C (max) - Excellent Reverse Recovery: Qrr = 105 n C - Low Body Diode VFSD: 1.23 V - Low Gate Charge: QG = 37.8 n C - Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive - Low Intrinsic Capacitance - ESD Protected: HBM Class 2 and CDM Class C3 - TO-247-4L Package for Faster Switching, Clean Gate Waveforms - This Device is Pb-Free, Halogen Free and is Ro HS pliant Typical Applications - EV Charging - PV Inverters - Switch Mode Power Supplies - Power Factor Correction Modules - Motor Drives - Induction Heating DATA SHEET .onsemi. TO247-4 CASE 340AN MARKING DIAGRAM UJ4C075023K4S AYYWW ZZZ UJ4C075023K4S A YY WW ZZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Code PIN CONNECTIONS D (1) G (4) KS (3) S...