UJ4C075023K4S Datasheet - UnitedSiC

SiC Cascode JFET

UJ4C075023K4S Features

* w On-resistance RDS(on): 23mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 105nC w Low body diode VFSD: 1.23V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and C

UJ4C075023K4S General Description

The UJ4C075023K4S is a 750V, 23mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to.

UJ4C075023K4S Datasheet (761.80 KB)

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UJ4C075023K4S

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UnitedSiC

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Sic cascode jfet.
DATASHEET UJ4C075023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 23 mohm Rev. C, January 202.

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UJ4C075023K4S SiC Cascode JFET UnitedSiC

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UJ4C075023K4S Features

UJ4C075023K4S General Description

Datasheet Details

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