Datasheet Specifications
- Part number
- 30P10GS
- Manufacturer
- VBsemi
- File Size
- 260.21 KB
- Datasheet
- 30P10GS-VBsemi.pdf
- Description
- P-Channel MOSFET
Description
30P10GS-VB 30P10GS-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) - 100 RDS(on) () 0.040 at VGS = - 10 V 0.050.
Features
* TrenchFET® Power MOSFET S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 TC = 25 °C - 37 Continuous Drain Current (TJ = 150 °C)b TC = 70 °C TA = 25 °30P10GS Distributors
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