* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Volt
AP75T10BGP Datasheet (884.42 KB)
AP75T10BGP
VBsemi
884.42 KB
N-channel 100v mosfet.
AP75T10BGP N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0085 at VGS = 10 V 100 0.010 at VGS = 6 V ID.
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