* Trench Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2011/65/EU D G S GD S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continu
CEP51A3
VBsemi
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N-channel 30v mosfet.
CEP51A3-VB
CEP51A3-VB Datasheet
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
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