F2804S-7P - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® power MOSFET.
Package with low thermal resistance.
100 % Rg and UIS tested D G Top View S D G S N-Channel MOSFET.

VBsemi

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Datasheet Details

Part number	F2804S-7P
Manufacturer	VBsemi
File Size	274.47 KB
Description	N-Channel MOSFET
Datasheet	F2804S-7P Datasheet
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F2804S-7P-VB F2804S-7P-VB Datasheet N-Channel 40 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package 40 0.00084 350 Single TO-263-7L TO-263 7-Lead FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range TC = 25 °C TC = 125 °C L = 0.

Published: Mar 4, 2025 |