* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain cur
F2804S-7P Datasheet (274.47 KB)
F2804S-7P
VBsemi
274.47 KB
N-channel mosfet.
F2804S-7P-VB F2804S-7P-VB Datasheet N-Channel 40 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Conf.
📁 Related Datasheet
F2867 VARIABLE SPEED SINGLE-PHASE FULL-WAVE PRE-DRIVER (UTC)
F28F008SA 8-MBIT (1-MBIT x 8) FlashFile MEMORY (Intel)
F28F010 1024K (128K x 8) CMOS FLASH MEMORY (Intel)
F28F020 2048(256 x 8) CMOS flash memory (Intel)
F28M35E20B Microcontrollers (Texas Instruments)
F28M35H22C Microcontrollers (Texas Instruments)
F28M35H52C Microcontrollers (Texas Instruments)
F28M35H52C-Q1 Microcontrollers (Texas Instruments)
F28M35M20B Microcontrollers (Texas Instruments)
F28M35M22C Microcontrollers (Texas Instruments)
