FQD50N06 - N-Channel MOSFET

Datasheet Summary

Features

175 °C Junction Temperature.
TrenchFET® Power MOSFET.
Material categorization: D TO-252 GD S G S N-Channel MOSFET www. VBsemi. tw.

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Datasheet Details

Part number	FQD50N06
Manufacturer	VBsemi
File Size	861.99 KB
Description	N-Channel MOSFET
Datasheet	FQD50N06 Datasheet
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FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 GD S G S N-Channel MOSFET www.VBsemi.tw ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 50 45a Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.

Published: Oct 27, 2020 |