FQD50N06 Datasheet - VBsemi

FQD50N06, N-Channel MOSFET

FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45

Features

* 175 °C Junction Temperature
* TrenchFET® Power MOSFET
* Material categorization: D TO-252 GD S G S N-Channel MOSFET www.
VBsemi.
tw ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuou

FQD50N06-VBsemi.pdf