* TrenchFET® power MOSFET
* 100 % Rg and UIS tested www.VBsemi.com TSOP-6 D1 D2 6D 5D G3 4S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID
GT2610
VBsemi
219.12 KB
N-channel mosfet.
GT2610-VB PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration GT2610-VB Datasheet N-Channel 60 V (D-S).
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