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GT2625 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2625 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 135m -2.3A Des.
The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number
GT2625
Manufacturer
GTM
File Size
347.50 KB
Datasheet
GT2625_GTM.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low Gate Charge
* Low On-resistance Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperat

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📌 All Tags

P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM GT2625-like datasheet