GT2625 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Datasheet Details

Part number	GT2625
Manufacturer	GTM
File Size	347.50 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GT2625_GTM.pdf

The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Low Gate Charge.
Low On-resistance Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A B C D E F Millimeter Min. Max. 2.70 3.

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Published: Sep 13, 2007 |