Datasheet Details
- Part number
- GT20J101
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 259.67 KB
- Datasheet
- GT20J101_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
GT20J101 Description
GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm *.
GT20J101 Applications
* Unit: mm
* The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation
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