Datasheet4U Logo Datasheet4U.com

GT20J101 Silicon N-Channel IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm *.

📥 Download Datasheet

Preview of GT20J101 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* Unit: mm
* The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation

GT20J101 Distributors

📁 Related Datasheet

GT20J121 GT20J341 GT20N135SRA GT2113 GT2123 GT2133

📌 All Tags

Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT20J101-like datasheet
GT20J301
GT20J311
GT20J321
GT20D101
GT20D201