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GT20N135SRA - Silicon N-Channel IGBT

GT20N135SRA Description

Discrete IGBTs Silicon N-Channel IGBT GT20N135SRA GT20N135SRA 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Application.

GT20N135SRA Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ. ) (IC = 40 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ. ) (IC = 20 A, Ta = 25 ) (6) High junction tem

GT20N135SRA Applications

* Dedicated to Voltage-Resonant Inverter Switching Applications
* Dedicated to Soft Switching Applications

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Silicon N-Channel IGBT Toshiba
Toshiba GT20N135SRA-like datasheet