Datasheet Specifications
- Part number
- GT20N135SRA
- Manufacturer
- Toshiba ↗
- File Size
- 643.34 KB
- Datasheet
- GT20N135SRA-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT20N135SRA GT20N135SRA 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Application.
Features
* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ. ) (IC = 40 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ. ) (IC = 20 A, Ta = 25 ) (6) High junction temApplications
* Dedicated to Voltage-Resonant Inverter Switching ApplicationsGT20N135SRA Distributors
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