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GT20J121 Datasheet - Toshiba

GT20J121 Silicon N-Channel IGBT

GT20J121 Features

* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A) (4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A) (5) TO-220SIS (Toshiba package name) 3. Packaging and Internal Circuit GT20J121 TO-220SIS 1: Gate 2: Collector 3: Emitter ©2021 1

GT20J121 Datasheet (253.14 KB)

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Datasheet Details

Part number:

GT20J121

Manufacturer:

Toshiba ↗

File Size:

253.14 KB

Description:

Silicon n-channel igbt.

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GT20J121 Silicon N-Channel IGBT Toshiba

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