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GT20J341

Silicon N-Channel IGBT

GT20J341 Features

* (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-220SIS 1 2012-04-26 Rev.2.0 Free Datasheet http://www.datasheet4u.com/ GT20J341 4. Absolute M

GT20J341 Datasheet (246.21 KB)

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Datasheet Details

Part number:

GT20J341

Manufacturer:

Toshiba ↗

File Size:

246.21 KB

Description:

Silicon n-channel igbt.

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GT20J341 Silicon N-Channel IGBT Toshiba

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