GT20J341 Datasheet, Igbt, Toshiba

GT20J341 Features

  • Igbt (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collec

PDF File Details

Part number:

GT20J341

Manufacturer:

Toshiba ↗

File Size:

246.21kb

Download:

📄 Datasheet

Description:

Silicon n-channel igbt.

Datasheet Preview: GT20J341 📥 Download PDF (246.21kb)
Page 2 of GT20J341 Page 3 of GT20J341

GT20J341 Application

  • Applications
  • Motor Drivers 2. Features (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD inclu

TAGS

GT20J341
Silicon
N-Channel
IGBT
Toshiba

📁 Related Datasheet

GT20J301 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT20J311 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT20J321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.. GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switc.

GT20J101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm • • • • T.

GT20J121 - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-.

GT20D101 - Silicon N-Channel Transistor (Toshiba Semiconductor)
.

GT20D201 - Silicon P-Channel Transistor (Toshiba Semiconductor)
.

GT20G101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT20G101SM - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT20G102 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

Stock and price

part
Toshiba America Electronic Components
IGBT 600V 20A TO-220SIS
DigiKey
GT20J341,S4X(S
74 In Stock
Qty : 2000 units
Unit Price : $1.05
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts