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GT20J321 Datasheet - Toshiba Semiconductor

GT20J321 Silicon N-Channel IGBT

www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and .

GT20J321 Datasheet (522.36 KB)

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Datasheet Details

Part number:

GT20J321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

522.36 KB

Description:

Silicon n-channel igbt.

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GT20J321 Silicon N-Channel IGBT Toshiba Semiconductor

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