GT20J321 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switc.

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Datasheet Specifications

Part number: GT20J321
Manufacturer: Toshiba ↗ Semiconductor
File Size: 522.36 KB
Datasheet: GT20J321_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Fast Switching Applications
* The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ. ) Low switching loss
* : Eon = 0.40 mJ (typ. ) : Eoff = 0.43 mJ (typ. ) Low saturation voltage

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GT20J321 Silicon N-Channel IGBT Toshiba Semiconductor

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