HAT2016R Dual N-Channel 30V MOSFET

VBsemi

Description

HAT2016R-VB HAT2016R-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.02.

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Datasheet Specifications

Part number: HAT2016R
Manufacturer: VBsemi
File Size: 216.88 KB
Datasheet: HAT2016R-VBsemi.pdf
Description: Dual N-Channel 30V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain

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HAT2016R Dual N-Channel 30V MOSFET VBsemi

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