IPB80N06S2L-H5 Datasheet, Mosfet, VBsemi

IPB80N06S2L-H5 Features

  • Mosfet
  • TrenchFET® power MOSFET
  • Package with low thermal resistance
  • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RA

PDF File Details

Part number:

IPB80N06S2L-H5

Manufacturer:

VBsemi

File Size:

387.60kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IPB80N06S2L-H5 📥 Download PDF (387.60kb)
Page 2 of IPB80N06S2L-H5 Page 3 of IPB80N06S2L-H5

TAGS

IPB80N06S2L-H5
N-Channel
MOSFET
VBsemi

📁 Related Datasheet

IPB80N06S2L-H5 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

IPB80N06S2L-05 - Power-Transistor (Infineon Technologies)
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qua.

IPB80N06S2L-06 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

IPB80N06S2L-07 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

IPB80N06S2L-09 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

IPB80N06S2L-11 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175.

IPB80N06S2-05 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.

IPB80N06S2-07 - Power-Transistor (Infineon Technologies)
IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 u.

IPB80N06S2-08 - Power-Transistor (Infineon Technologies)
IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 u.

IPB80N06S2-09 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 55V 80A TO263-3
DigiKey
IPB80N06S2L-H5
0 In Stock
Qty : 3000 units
Unit Price : $0.87
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