* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS
IPB80N06S2L-H5 Datasheet (387.60 KB)
IPB80N06S2L-H5
VBsemi
387.60 KB
N-channel mosfet.
IPB80N06S2L-H5-VB
IPB80N06S2L-H5-VB Datasheet
N-Channel 60 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
60.
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