IPB80N06S2L-H5 - N-Channel MOSFET

VBsemi

IPB80N06S2L-H5 Description

IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60.

IPB80N06S2L-H5 Features

* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS

📥 Download Datasheet

IPB80N06S2L-H5 Datasheet Preview — Preview of IPB80N06S2L-H5 PDF

Datasheet Details

Part number: IPB80N06S2L-H5
Manufacturer: VBsemi
File Size: 387.60 KB
Datasheet: IPB80N06S2L-H5-VBsemi.pdf
Description: N-Channel MOSFET

📁 Related Datasheet

IPB80N06S2L-05 - Power-Transistor (Infineon Technologies)
IPB80N06S2L-06 - Power-Transistor (Infineon Technologies)
IPB80N06S2L-07 - Power-Transistor (Infineon Technologies)
IPB80N06S2L-09 - Power-Transistor (Infineon Technologies)
IPB80N06S2L-11 - Power-Transistor (Infineon Technologies)
IPB80N06S2-05 - Power-Transistor (Infineon Technologies)
IPB80N06S2-07 - Power-Transistor (Infineon Technologies)
IPB80N06S2-08 - Power-Transistor (Infineon Technologies)

📌 All Tags

N-Channel MOSFET VBsemi

VBsemi IPB80N06S2L-H5-like datasheet

IPB80N06S2L-H5 Stock/Price