IPB80N06S2L-H5 Datasheet - VBsemi

IPB80N06S2L-H5, N-Channel MOSFET

IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60.

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Datasheet Details

Part number:

IPB80N06S2L-H5

Manufacturer:

VBsemi

File Size:

387.60 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS

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IPB80N06S2L-H5 N-Channel MOSFET VBsemi

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