* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET
* Ultra Low On-Resistance
* Small Size APPLICATIONS
* Active Clamp Circuits in DC/DC Power Supplies Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter
K368
VBsemi
264.17 KB
P-channel mosfet.
K368-VB
K368-VB Datasheet
P-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.50 at VGS = - 10 V 0.56 at VG.
📁 Related Datasheet
K360 - Silicon Zener Diodes
(Aeroflex)
Silicon Zener Diodes
Glass Axial Leaded
Low Level, Very Low Voltage, Low Leakage
Model
K120 K150 K180 K210 K240 K270 K300 K330 K360 K390 K430 K470 .
K360 - LOW LEVEL ZENER DIODES
(Knox Inc)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.
K3601G - Multipulse SIDACs
(Littelfuse)
Teccor® brand Thyristors
Multipulse™ SIDACs
Kxxx1G Series
RoHS
Schematic Symbol
Applications Typical application circuit presented in Figure 10 of t.
K3601GL - Standard Bidirectional SIDAC
(Littelfuse)
Teccor® brand Thyristors
Standard Bidirectional SIDACs
Kxxx1GL Series
RoHS
Schematic Symbol
Applications Typical application circuit presented in F.
K3603-01MR - 2SK3603-01MR
(Fuji Electric)
2SK3603-01MR
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Aval.
K3607-01MR - 2SK3607-01MR
(Fuji)
2SK3607-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p.
K3610 - Photocoupler
(KODENSHI KOREA CORP)
Photocoupler
K3610 • K3611
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pac.
K3611 - Photocoupler
(KODENSHI KOREA CORP)
Photocoupler
K3610 • K3611
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pac.
