* TrenchFET® Power MOSFET
* Package with Low Thermal Resistance
* 100 % Rg and UIS Tested D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current T
NCEP01T30T Datasheet (222.62 KB)
NCEP01T30T
VBsemi
222.62 KB
N-channel mosfet.
NCEP01T30T-VB NCEP01T30T-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configu.
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