Click to expand full text
NCEP01T30T-VB
NCEP01T30T-VB Datasheet N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration
100 0.002 320 Single
TO-247AC
S D G
Top View
FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °Ca TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
NCEP01T30T Datasheet
