* TrenchFET® power MOSFET
* 100 % Rg and UIS tested www.VBsemi.com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Dra
SI9407BDY-T1-GE3 Datasheet (249.80 KB)
SI9407BDY-T1-GE3
VBsemi
249.80 KB
P-channel mosfet.
SI9407BDY-T1-GE3-VB
SI9407BDY-T1-GE3-VB Datasheet
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS .
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