Datasheet Details
- Part number
- SI9407BDY-T1-GE3
- Manufacturer
- VBsemi
- File Size
- 249.80 KB
- Datasheet
- SI9407BDY-T1-GE3-VBsemi.pdf
- Description
- P-Channel MOSFET
SI9407BDY-T1-GE3 Description
SI9407BDY-T1-GE3-VB SI9407BDY-T1-GE3-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS .
SI9407BDY-T1-GE3 Features
* TrenchFET® power MOSFET
* 100 % Rg and UIS tested
www. VBsemi. com
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Dra
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