SI9407BDY-T1-GE3 - P-Channel MOSFET

VBsemi

SI9407BDY-T1-GE3 Description

SI9407BDY-T1-GE3-VB SI9407BDY-T1-GE3-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS .

SI9407BDY-T1-GE3 Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested www. VBsemi. com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Dra

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Datasheet Details

Part number: SI9407BDY-T1-GE3
Manufacturer: VBsemi
File Size: 249.80 KB
Datasheet: SI9407BDY-T1-GE3-VBsemi.pdf
Description: P-Channel MOSFET

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P-Channel MOSFET VBsemi

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