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SI9410DY - N-channel enhancement mode field-effect transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: Si9410DY in SOT96-1 (SO8).

2.

Features

  • s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3.

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Datasheet Details

Part number SI9410DY
Manufacturer NXP
File Size 266.57 KB
Description N-channel enhancement mode field-effect transistor
Datasheet download datasheet SI9410DY Datasheet
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Full PDF Text Transcription

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Si9410DY N-channel enhancement mode field-effect transistor M3D315 Rev. 02 — 05 July 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9410DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1 2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description n/c 8 5 d Simplified outline Symbol source (s) gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics.
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