SI9936DY - N-channel enhancement mode field-effect transistor

NXP Semiconductors

General Description

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: Si9936DY in SOT96-1 (SO8).

Key Features

s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3.

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SI9936DY n-channel enhancement mode field-effect transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	SI9936DY
Manufacturer	NXP Semiconductors
File Size	260.66 KB
Description	N-channel enhancement mode field-effect transistor
Datasheet	SI9936DY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si9936DY N-channel enhancement mode ﬁeld-effect transistor M3D315 Rev. 01 — 16 July 2001 Product data 1. Description Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9936DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4.