SI9936DY Datasheet | NXP Semiconductors

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology. Product availability: Si9936DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s Trench MOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1 2 3 4 5,6 7,8 Pinning - SOT96-1, simplified outline and symbol Description source 1 (s1) 8 7 6 5 d1 d2 Simplified outline Symbol gate 1 (g1) source 2 (s2) gate 2 (g2) drain 2 (d2) drain 1 (d1) pin 1 index 03ab52 03ab58 g1 s1 g2 s2 SOT96-1 (SO8) 1. Trench MOS is a trademark of Royal Philips Electronics. Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tamb = 25 °C; pulsed; tp ≤ 10 s Tamb = 25 °C; pulsed; tp ≤ 10 s VGS = 10 V; ID = 5 A VGS = 4.5 V; ID = 3.9 A Typ - - - - 35 44 Max 30 5 2 150 50 80 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC) drain current peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current Tamb = 25 °C; pulsed; tp ≤ 10 s Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3 Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2 Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 1 Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 1 Conditions Tj = 25 to 150 °C Min - - - - - - - - 55 - 55 - Max 30 ±20 5 4 40 2 1.3 +150 +150 1.3 Unit V V A A A W W °C °C A Source-drain...