Si9407DY - P-Channel MOSFET

TEMIC

Datasheet Details

Part number	Si9407DY
Manufacturer	TEMIC
File Size	51.64 KB
Description	P-Channel MOSFET
Datasheet	Si9407DY Datasheet
Additional preview pages of the Si9407DY datasheet.

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P-Channel Enhancement-Mode MOSFET Si9407DY Product Summary VDS (V) –60 rDS(on) (W) 0.150 @ VGS = –10 V 0.240 @ VGS = –4.5 V SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View ID (A) "3.0 "2.4 SSS G DDDD P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –60 V "20 "3.0 "2.4 A "12 –2.5 2.5 W 1.6 –55 to 150 _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 50 _C/W Notes a.

Published: Nov 18, 2018 |