Si9407DY Datasheet | TEMIC Semiconductors

P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) - 60 r DS(on) (W) 0.150 @ VGS = - 10 V 0.240 @ VGS = - 4.5 V SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View ID (A) "3.0 "2.4 DDDD P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg - 60 V "20 "3.0 "2.4 A "12 - 2.5 2.5 W - 55 to 150 _C Thermal Resistance Ratings Parameter Symbol Limit Unit...