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Si9407AEY
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
–60
rDS(on) (W)
0.120 @ VGS = –10 V 0.15 @ VGS = –4.5 V
ID (A)
"3.5 "3.1
S S S
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
D D D D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–60 "20 "3.5 "3.0 "30 –2.5 3.0
Unit
V
A
W 2.1 –55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a.
SI9407AEY Datasheet
