SI9407BDY-T1-GE3 Description
SI9407BDY-T1-GE3-VB SI9407BDY-T1-GE3-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.060 0.063.
SI9407BDY-T1-GE3 Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested