SI9407BDY-T1-GE3 Datasheet | VBsemi

FEATURES - Trench FET® power MOSFET - 100 % Rg and UIS tested .VBsemi. SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 m H Maximum Power Dissipation a TC = 25 °C PD TC = 125 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -60 ± 20 -8 -4.75 -4.5 -32 -22.4 25 5 1.67 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mount...