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SI9407BDY-T1-GE3 - P-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested www. VBsemi. com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET.

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SI9407BDY-T1-GE3-VB SI9407BDY-T1-GE3-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.060 0.063 -8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested www.VBsemi.com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.