SI9926BDY-T1-E3 Description
SI9926BDY-T1-E3-VB SI9926BDY-T1-E3-VB Datasheet Dual N-Channel 20-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.019 at VGS = 4.5 V 0.026 at VGS = 2.5 V ID (A) 7.1 6.0.
SI9926BDY-T1-E3 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- Trench Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC