Click to expand full text
Si9405DY
P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
–20
rDS(on) (W)
0.10 @ VGS = –10 V 0.16 @ VGS = –4.5 V
ID (A)
"4.3 "3.4
Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ
S S
SO-8
NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–20 "20 "4.3 "3.3 "20 –2.2 2.5 1.
Si9405DY Datasheet
