Si9405DY Datasheet | TEMIC Semiconductors

P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) - 20 r DS(on) (W) 0.10 @ VGS = - 10 V 0.16 @ VGS = - 4.5 V ID (A) "4.3 "3.4 Remended upgrade: Si9430DY Lower profile/smaller size- see LITE FOOTR equivalent: Si6447DQ SO-8 NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 "20 "4.3 "3.3 "20 - 2.2 2.5 1.6 - 55 to 150 Unit W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix Fax Back, 1-408-970-5600. Please request Fax Back document #1202. A SPICE Model data sheet is available for this product (Fax Back document #5102). Symbol Rth JA Limit Unit _C/W Siliconix S-47958- Rev. H, 15-Apr-96 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = - 250 m A VDS = 0 V, VGS = "20 V VDS...