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SI9424BDY - P-Channel 20-V (D-S) MOSFET

Features

  • ID (A) -7.1 rDS(on) (W) 0.025 @ VGS = -4.5 V D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G.

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Datasheet Details

Part number SI9424BDY
Manufacturer Vishay Siliconix
File Size 44.55 KB
Description P-Channel 20-V (D-S) MOSFET
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Full PDF Text Transcription

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Si9424BDY New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 0.033 @ VGS = -2.5 V - 6.1 FEATURES ID (A) -7.1 rDS(on) (W) 0.025 @ VGS = -4.5 V D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID -5.6 IDM IS -1.7 2.0 1.3 -55 to 150 -30 -1.0 1.25 0.8 W _C -4.5 A Symbol VDS VGS 10 secs Steady State -20 "9 Unit V - 7.1 -5.
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