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Si9424BDY
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-20 0.033 @ VGS = -2.5 V - 6.1
FEATURES
ID (A)
-7.1
rDS(on) (W)
0.025 @ VGS = -4.5 V
D TrenchFETr Power MOSFET
S
SO-8
S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID -5.6 IDM IS -1.7 2.0 1.3 -55 to 150 -30 -1.0 1.25 0.8 W _C -4.5 A
Symbol
VDS VGS
10 secs
Steady State
-20 "9
Unit
V
- 7.1
-5.
SI9424BDY Datasheet
