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Si9422DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.420 @ VGS = 10 V
ID (A)
"1.7
D
SO-8
S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
Limit
200 "20 "1.7 "1.3 "12 "12.5 8 2.1 2.5 1.