SSS3402 Datasheet, Mosfet, VBsemi

SSS3402 Features

• Mosfet
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS <

PDF File Details

Part number:

SSS3402

Manufacturer:

VBsemi

File Size:

227.36kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

SSS3402 Application

• Applications
• DC/DC Converter D G1 S2 3D Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Pa

TAGS

SSS3402

VBsemi

📁 Related Datasheet

SSS3400 - N-Channel MOSFET (South Sea Semiconductor)
SSS3400 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 30V SOT-23 D ID (A) 3.5A RDS(ON) (mΩ) Max 40 @VGS = 10V G 60 @VGS = 4.5V S D .

SSS3401 - P-Channel MOSFET (South Sea Semiconductor)
SSS3401 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SOT-23 D ID (A) -3A RDS(ON) (mΩ) Max 75 @VGS = -10V G 100 @VGS = -4.5V S .

SSS3402 - N-Channel MOSFET (South Sea Semiconductor)
SSS3402 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 30V SOT-23 D ID (A) 4.6A RDS(ON) (mΩ) Max 30 @VGS = 10V G 50 @VGS = 4.5V S D .

SSS3403 - P-Channel MOSFET (South Sea Semiconductor)
SSS3403 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SOT-23 D ID (A) -3.4A RDS(ON) (mΩ) Max 45 @VGS = -10V G 80 @VGS = -4.5V S .

SSS3N70 - (SSS3N70 / SSS3N80) N-Channel Power MOSFETS (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .

SSS3N80 - (SSS3N70 / SSS3N80) N-Channel Power MOSFETS (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .

SSS3N80A - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .

SSS3N90 - N-Channel Power MOSFETS (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .

SSS3N90A - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c .

SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics VDSS RDS(on) 100V 3.7mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special desig.