* Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 +
SSS3403
South Sea Semiconductor
164.07 KB
P-channel mosfet.
SSS3403
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
-30V
SOT-23
D
ID (A)
-3.4A
RDS(ON) (mΩ) Max 45 @VGS = -10V
G
80 @VGS = -4.5V
S
.
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