* Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb Free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 8 2.4
SSS2302
South Sea Semiconductor
127.30 KB
N-channel mosfet.
SSS2302
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
20V
SOT-23
D
ID (A)
2.4A
RDS(ON) (m ) Max 60 @VGS = 4.5V
G
115 @VGS = 2.5V
S
D.
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