* Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 10 2.3 10 1.25
SSS2308
South Sea Semiconductor
43.28 KB
N-channel mosfet.
SSS2308
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
SOT-23
80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V
G S
D
F.
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