* ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limi
SSS2321
South Sea Semiconductor
52.55 KB
P-channel mosfet.
SSS2321
P-Channel Enhancement Mode MOSFET
SOT-23
D
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 60 @VGS = -4.5V
G
21 23
YW
-20V
-3.4A
80 @VGS.
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