Part number:
SSS2N60A
Manufacturer:
Fairchild Semiconductor
File Size:
404.66 KB
Description:
Advanced power mosfet.
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω ID = 1.3 A TO-220F 1 2 3 1.Gate 2. Drain 3. So
SSS2N60A Datasheet (404.66 KB)
SSS2N60A
Fairchild Semiconductor
404.66 KB
Advanced power mosfet.
📁 Related Datasheet
SSS2N60 N-CHANNEL MOSFET (Tuofeng Semiconductor)
SSS2N60B 600V N-Channel MOSFET (Fairchild Semiconductor)
SSS2301A P-Channel MOSFET (South Sea Semiconductor)
SSS2302 N-Channel MOSFET (South Sea Semiconductor)
SSS2308 N-Channel MOSFET (South Sea Semiconductor)
SSS2309 P-Channel MOSFET (South Sea Semiconductor)
SSS2321 P-Channel MOSFET (South Sea Semiconductor)
SSS2323 P-Channel MOSFET (South Sea Semiconductor)
SSS1004 N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSS1004 N-Channel MOSFET (GOOD-ARK)