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SSS2N60A

Advanced Power MOSFET

SSS2N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω ID = 1.3 A TO-220F 1 2 3 1.Gate 2. Drain 3. So

SSS2N60A Datasheet (404.66 KB)

Preview of SSS2N60A PDF

Datasheet Details

Part number:

SSS2N60A

Manufacturer:

Fairchild Semiconductor

File Size:

404.66 KB

Description:

Advanced power mosfet.

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TAGS

SSS2N60A Advanced Power MOSFET Fairchild Semiconductor

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