SSS4N60AS - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSS4N60AS
Manufacturer	Fairchild ↗ Semiconductor
File Size	359.56 KB
Description	Advanced Power MOSFET
Datasheet	SSS4N60AS-FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Av.

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Published: Feb 3, 2015 |