Part number:
SSS4N80
Manufacturer:
Samsung
File Size:
400.12 KB
Description:
N-channel power mosfets.
.
SSS4N80
Samsung
400.12 KB
N-channel power mosfets.
.
📁 Related Datasheet
SSS4N80AS - Straight 1-Row BergStik II Headers
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSS4N60 - N-CHANNEL MOSFET
(Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Technology co.,Ltd
SSS4N60
4 Amps，600Volts N-CHANNEL MOSFET
■
DESCRIPTION
The SSS4N60 is a high.
SSS4N60AS - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSS4N60B - Straight 1-Row BergStik II Headers
(Fairchild Semiconductor)
SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pro.
SSS4N70 - N-Channel Power MOSFETS
(Samsung)
.
SSS4008J8L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 6.9mΩ (typ.)
ID
68A
PDFN 3*3-8L
Main Features
Advanced MOSFET process technology Special des.
SSS45N20B - Straight 1-Row BergStik II Headers
(Fairchild Semiconductor)
SSP45N20B/SSS45N20B
November 2001
SSP45N20B/SSS45N20B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
SSS1004 - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics
VDSS RDS(on)
100V 3.7mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced Process Technology Special desig.
