Part number:
SSS4N80AS
Manufacturer:
Fairchild Semiconductor
File Size:
158.42 KB
Description:
Straight 1-row bergstik ii headers.
SSS4N80AS_FairchildSemiconductor.pdf
Datasheet Details
SSS4N80AS Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A TO-220F 1 2 3 1.Gate 2. Drain 3. S
SSS4N80AS_FairchildSemiconductor.pdf
Datasheet Details
SSS4N80AS
Fairchild Semiconductor
158.42 KB
Straight 1-row bergstik ii headers.
SSS4N80AS Distributor
📁 Related Datasheet
SSS4N80 N-Channel Power MOSFETS (Samsung)
SSS4N60 N-CHANNEL MOSFET (Tuofeng Semiconductor)
SSS4N60AS Advanced Power MOSFET (Fairchild Semiconductor)
SSS4N60B Straight 1-Row BergStik II Headers (Fairchild Semiconductor)
SSS4N70 N-Channel Power MOSFETS (Samsung)
SSS4008J8L MOSFET (Silikron)
SSS45N20B Straight 1-Row BergStik II Headers (Fairchild Semiconductor)
SSS1004 N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)