SSS1004A7 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

Description

Main Product Characteristics VDSS RDS(on) 100V 3.0mΩ (typ.) ID 180A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

📥 Download Datasheet

SSS1004A7 Datasheet Preview — Preview of SSS1004A7 PDF

Datasheet Specifications

Part number: SSS1004A7
Manufacturer: SilikrON Semiconductor ↗
File Size: 338.01 KB
Datasheet: SSS1004A7-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* TO-263-7L
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSS1004A7 Distributors

📁 Related Datasheet

SSS1004AL SSS1004L SSS10N60 SSS10N60A SSS10N60B SSS10R20BFU

📌 All Tags

SSS1004A7 N-Channel enhancement mode power field effect transistors Silikron Semiconductor

Silikron Semiconductor SSS1004A7-like datasheet