SSS1004A7

N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSS1004A7 Features

* TO-263-7L

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSS1004A7 1, Gate 2~3,5~7 Source 4,8 Drai

SSS1004A7 Datasheet (338.01 KB)

SSS1004A7 Datasheet Preview — Preview of SSS1004A7 PDF

Datasheet Details

Part number:

SSS1004A7

Manufacturer:

SilikrON Semiconductor ↗

File Size:

338.01 KB

Description:

N-channel enhancement mode power field effect transistors.

📁 Related Datasheet

SSS1004AL - MOSFET (Silikron)
Main Product Characteristics: VDSS 100V RDS(on) 4.2mΩ (typ.) ID 160A TO-220 SSS1004L Features and Benefits:  Advanced MOSFET process technolog.

SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics VDSS RDS(on) 100V 3.7mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special desig.

SSS1004 - N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 100V RDS(on) 3.4mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special desi.

SSS1004L - MOSFET (Silikron)
Main Product Characteristics: VDSS 100V RDS(on) 4.2mΩ (typ.) ID 160A TO-220 SSS1004L Features and Benefits:  Advanced MOSFET process technolog.

SSS10N60 - N-CHANNEL MOSFET (Tuofeng)
Free Datasheet http://.datasheet-pdf./ Free Datasheet http://.datasheet-pdf./ Free Datasheet http://.datasheet-pdf./ Free Datashe.

SSS10N60A - Advanced Power MOSFET (Fairchild Semiconductor)
.. Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.

SSS10N60B - N-Channel MOSFET (Fairchild Semiconductor)
.. SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e.

SSS10R20BFU - MOSFET (Silikron)
Main Product Characteristics VDSS 100V RDS(on) 17mΩ (typ.) ID 8A ① Features and Benefits  Low RDS(on) & FOM  Extremely low switching loss  Ex.

TAGS

SSS1004A7 N-Channel enhancement mode power field effect transistors Silikron Semiconductor

Image Gallery

SSS1004A7 Features

Datasheet Details

File Size:

Description:

SSS1004A7 Distributor