SSS10N60A - Advanced Power MOSFET
SSS10N60A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSS10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 5.1 A TO-220F 1 2 3 1.Gate 2. Drain 3. S
