SSS45N20B - Straight 1-Row BergStik II Headers

Fairchild Semiconductor

Datasheet Details

Part number	SSS45N20B
Manufacturer	Fairchild ↗ Semiconductor
File Size	914.42 KB
Description	Straight 1-Row BergStik II Headers
Datasheet	SSS45N20B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

📁 SSS45N20B Similar Datasheet

SSS4008J8L - MOSFET (Silikron)
SSS4N60 - N-CHANNEL MOSFET (Tuofeng Semiconductor)
SSS4N70 - N-Channel Power MOSFETS (Samsung)
SSS4N80 - N-Channel Power MOSFETS (Samsung)
SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSS1004A7 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSS1004AL - MOSFET (Silikron)
SSS1004L - MOSFET (Silikron)

Other Datasheets by Fairchild Semiconductor

Published: Jan 14, 2006 |