SSS45N20B Datasheet - Fairchild Semiconductor

Straight 1-Row BergStik II Headers

SSS45N20B Features

* 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum

SSS45N20B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSS45N20B Datasheet (914.42 KB)

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SSS45N20B

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Fairchild Semiconductor

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Straight 1-row bergstik ii headers.

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SSS45N20B Straight 1-Row BergStik Headers Fairchild Semiconductor

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SSS45N20B Features

SSS45N20B General Description

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