SSS2N60A
SSS2N60A is Advanced Power MOSFET manufactured by Fairchild Semiconductor.
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.)
BVDSS = 600 V RDS(on) = 5 Ω ID = 1.3 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 o C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
1 O o o
Value 600 1.3 0.82 6 + _ 30 138 1.3 2.3 3.0 23 0.18
- 55 to +150
Units V A A V m J A m J V/ns W W/ o C
O 1 O 1 O 3 O
2 o
Thermal Resistance
Symbol R θ JC R θ JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 5.5 62.5 Units o
C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
Data Sheet 4 U .
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Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge Min. Typ. Max. Units 600 -2.0 -----------------0.77 ------1.08 315 38 14 12 15 41 16 15 2.6 6.7 --4.0 100 -100 25 250 5.0 -410 45 17 35 40 90 40 21 --n C ns p F µA Ω Ω V V n A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 o C unless otherwise specified)
Test...
