SSS2N60B Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Features - - - - - - 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 n C) Low Crss ( typical 7.6 p F) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics G G DS TO-220 SSP Series GD S TO-220F SSS Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP2N60B 600 2.0 1.3 6.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS2N60B 2.0 - 1.3 - 6.0 - 120 2.0 5.4 5.5 Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 54 0.43 -55 to +150...