SSS4008J8L Datasheet | Silikron

Features - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Pin Assignments Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C EAS VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Single Pulse Avalanche Energy @ L=0.1m H Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 68 125 1.67 31 40 ± 20 -55 to +150 Units W m J V V °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: preliminary page 1 of 7 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. - - Max. 30 85 Units ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min....